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2012年9月26日 星期三

SPI Flash Chip - Numonyx(M25PX80) Command List



Features
> SPI bus compatible serial interface
> 75 MHz (maximum) clock frequency
> 2.3 V to 3.6 V single supply voltage
> Dual input/output instructions resulting in an equivalent clock frequency of 150 MHz:
-        Dual Output Fast Read instruction
-        Dual Input Fast Program instruction
8 Mbit Flash memory
-        Uniform 4-Kbyte subsectors
-        Uniform 64-Kbyte sectors
> Additional 64-byte user-lockable, one-time programmable (OTP) area
> Erase capability
-        Subsector (4-Kbyte) granularity
-        Sector (64-Kbyte) granularity
-        Bulk Erase (8 Mbit) in 8 s (typical)
> Write protections
-        Software write protection applicable to every 64-Kbyte sector (volatile lock bit)
-        Hardware write protection: protected area size defined by three non-volatile bits (BP0, BP1 and BP2)
> Deep Power-down mode: 5 μA (typical)
> Electronic signature
-        JEDEC standard two-byte signature (7114h)
-        Unique ID code (UID) with16 bytes read-only, available upon customer request
> More than 100 000 write cycles per sector
> More than 20 year data retention
> Packages
-        RoHS compliant

Software protection truth table (Sectors 0 to 63, 64 Kbyte granularity)
Sector Lock Register

Protection status
Lock
Down bit
Write
Lock bit
0
0
Sector unprotected from Program/Erase/Write operations, protection status reversible
0
1
Sector protected from Program/Erase/Write operations, protection status reversible
1
0
Sector unprotected from Program/Erase/Write operations, Sector protection status cannot be changed except by a power-up.
1
1
Sector protected from Program/Erase/Write operations, Sector protection status cannot be changed except by a Power-up.

Instruction set
Instruction
Description
One-byte instruction code
Address Bytes
Dummy Bytes
Data Bytes
WREN
Write Enable
06h (0000 0110B)
0
0
0
WRDI
Write Disable
04h (0000 0100B)
0
0
0
RDID
Read Identification
9Fh (1001 1111B)
0
0
1 to 20
9Eh (1001 1110B)
0
0
1 to 3
RDSR
Read Status Register
05h (0000 0101B)
0
0
1 to
WRSR
Write Status Register
01h (0000 0001B)
0
0
1
WRLR
Write to Lock Register
E5h (1110 0101B)
3
0
1
RDLR
Read Lock Register
E8h (1110 1000B)
3
0
1
READ
Read Data Bytes
03h (0000 0011B)
3
0
1 to
FAST_READ
Read Data Bytes at higher speed
0Bh (0000 1011B)
3
1
1 to
DOFR
Dual Output Fast Read
3Bh (0011 1011B)
3
1
1 to
ROTP
Read OTP (Read 64 bytes of OTP area)
4Bh (0100 1011B)
3
1
1 to 65
POTP
Program OTP (Program 64 bytes of OTP area)
42h (0100 0010B)
3
0
1 to 65
PP
Page Program
02h (0000 0010B)
3
0
1 to 256
DIFP
Dual Input Fast Program
A2h (1010 0010B)
3
0
1 to 256
SSE
Subsector Erase
20h (0010 0000B)
3
0
0
SE
Sector Erase
D8h (1101 1000B)
3
0
0
BE
Bulk Erase
C7h (1100 0111B)
0
0
0
DP
Deep Power-down
B9h (1011 1001B)
0
0
0
RDP
Release from Deep Power-down
ABh (1010 1011B)
0
0
0

 
Status Register Format
Bit
Name
Description
7
SRWD
Status Register Write Protect
6
0

5
TB
Top/Bottom bit
4:2
BP2 – BP0
Block Protect bits
1
WEL
Write Enable Latch bit
0
WIP
Write In Progress bit

Manufacturer and Device ID Information
Byte No.
Data Type
Value
1
Manufacturer identification
20h
2
Device identification (Memory type)
71h
3
Device identification (Memory capacity)
14h
4
UID(CFD length)
10h
5-20
UID(CFD content)
16 bytes

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